| 摘要 |
A process applied to grinding, dicing, and/or stacking semiconductors is disclosed. One feature of the process is that after transparent material is stuck on its active surface, a semiconductor is ground from another surface thereof to become thinner, then the semiconductor is diced, by taking advantage of transparency of the transparent material, from its active surface, to obtain at least one smaller semiconductor unit such as die/dice or chip(s). Another feature is that the transparent material remains sticking to the active surface of the die by an adhesion layer until the die is attached to a carrier or another die, and then the transparent material and the adhesion layer are removed by taking advantage of a function of the adhesion layer: receiving a ray to lose adhesion between it and the active surface. Preferably the ray reaches the adhesion layer via the transparent material stuck on the active surface of the die.
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