<p>An electrolytic plating method and composition for electrolytically plating Cu onto a semiconductor integrated circuit substrate having submicron-sized interconnect features. The composition comprises a source of Cu ions and a suppressor compound comprising polyether groups. The method involves superfilling by rapid bottom-up deposition at a superfill speed by which Cu deposition in a vertical direction from the bottoms of the features to the top openings of the features is substantially greater than Cu deposition on the side walls.</p>
申请公布号
WO2006053242(A3)
申请公布日期
2006.06.29
申请号
WO2005US40996
申请日期
2005.11.14
申请人
ENTHONE INC.;PANECCASIO, VINCENT;LIN, XUAN;FIGURA, PAUL;HURTUBISE, RICHARD
发明人
PANECCASIO, VINCENT;LIN, XUAN;FIGURA, PAUL;HURTUBISE, RICHARD