发明名称 COMPOSITE STRUCTURE WITH HIGH HEAT DISSIPATION
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a composite structure with a good heat dissipation in the composite structure for use of optics equipped with a layered structure having at least one layer consisting of a supporting wafer and materials selected from a monocrystalline material, a photoelectron enginnering, or electronics. <P>SOLUTION: This composite structure 40 for use in the optics, the photoelectron engineering, or the electronics comprises: a supporting wafer 20; a layer consisting of materials selected from the monocrystalline material; and a layer 13 consisting of a dielectric material, wherein there are selected materials by which the supporting wafer 20, a layer 11 consisting of the monocrystalline material and the dielectric layer 13 are made so that a thermal impedance of the composite structure 40 between an ambient temperature and 600°K may become a value that is not greater than about 1.3 times a thermal impedance of a monocrystalline bulk SiC wafer having the same dimension as the composite structure, and a thickness of each layer is adjusted. Moreover, there is also disclosed a method of manufacturing this composite structure 40. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p>
申请公布号 JP2006173577(A) 申请公布日期 2006.06.29
申请号 JP20050316324 申请日期 2005.10.31
申请人 SOI TEC SILICON ON INSULATOR TECHNOLOGIES 发明人 BOUSSAGOL ALICE;FAURE BRUCE
分类号 H01L27/12;H01L21/02;H01L21/338;H01L27/08;H01L29/26;H01L29/778;H01L29/812 主分类号 H01L27/12
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