| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To easily perform a test in an OTP memory using a electric fuse element for a storage element. <P>SOLUTION: When a normal operation signal is made to be in an inactivation state by the input of a test signal TEST, a protection transistor 13 connected to an e-fuse element 12 in parallel is activated. When a normal read operation is performed in this state, a storage cell 11 outputs an output signal onto a data line DL, where the gate insulation film of the e-fuse element 12 is possibly in a broken state. Thus, information different from the one actually held by the e-fuse element 12 is read, so that the reading propriety test of the e-fuse element 12 in an unprogrammed state is performed in a pseudo term without performing actual writing. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p> |
