SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To form withstand pressure of a peripheral region to be higher than that of a cell region in a semiconductor device having an SJ structure. SOLUTION: The semiconductor lower layer 23 of the peripheral region is formed to include lower concentration of n-type impurities compared to an n-type column 27 constituting a combination of the cell region. A reduced surface layer 52 comprising p-type impurities is formed on the surface of the peripheral semiconductor layer 23. A field oxide layer 54 is formed on the surface of the reduced surface layer 52, and a field plate 42a is formed on the surface of the field oxide layer 54. COPYRIGHT: (C)2006,JPO&NCIPI