| 摘要 |
PROBLEM TO BE SOLVED: To prevent the characteristics of a ferroelectric film or a high dielectric film from deteriorating due to water molecules remaining in the vicinity of an element containing a ferroelectric film or a high dielectric film. SOLUTION: In a cleaning process being performed later than a process for forming a ferroelectric thin film 110 becoming a part of a ferroelectric thin film capacitor, dry cleaning, e.g. ashing, Ar aerosol cleaning, CO<SB>2</SB>cleaning, cleaning with CO<SB>2</SB>in a supercritical state, or UV cleaning, is employed. Alternatively, cleaning liquid of organic solvent, or the like, substantially containing no moisture, is employed in the cleaning process. COPYRIGHT: (C)2006,JPO&NCIPI
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