| 摘要 |
PROBLEM TO BE SOLVED: To improve the controllability of a threshold voltage in an FET using a high dielectric constant gate insulating film, and in its manufacturing method. SOLUTION: After a high dielectric constant gate insulating film 110 is formed on a substrate 101, a gate electrode 111a is formed on the high dielectric constant gate insulating film 110. Then, an n-type impurity is introduced into the substrate 101 by taking at least the gate electrode 111a as a mask to form an n-type extension region 113. Subsequently, a p-type impurity is introduced below the n-type extension region 113 on the substrate 101 by taking at least the gate electrode 111a as a mask to form a p-type pocket region 114. Herein, an introduction amount of arsenic (As) as the n-type impurity into the n-type extension region 113 is set within a certain range of a predetermined value or lower defined on the basis of the thickness of the high dielectric constant gate insulating film 110. COPYRIGHT: (C)2006,JPO&NCIPI
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