发明名称 SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor device capable of detecting uniformly an infrared ray with high sensitivity, as the semiconductor device for detecting the infrared ray, and capable of restraining a manufacturing cost, and to provide its manufacturing method. SOLUTION: This semiconductor device 50 has an infrared absorption part 5 for absorbing the infrared ray emitted from a measuring object, and a temperature detecting part 6 for detecting a temperature change of the infrared absorption part 5. A cavity part 3 is formed to separate thermally a thermal separation area 1 formed with the temperature detecting part 6 from a silicon substrate 2, in an under side of the temperature detecting part 6, and the cavity part 3 is formed into a substantially uniform height. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006170945(A) 申请公布日期 2006.06.29
申请号 JP20040367611 申请日期 2004.12.20
申请人 CANON INC 发明人 ICHIKAWA TAKESHI;SAKAGUCHI KIYOBUMI
分类号 G01J1/02;H01L27/14;H01L35/32;H01L35/34;H01L37/00;H04N5/33 主分类号 G01J1/02
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