| 摘要 |
A CMOS image sensor and a method for fabricating the same in which characteristics of the image sensor are not affected even if a profile of microlenses is varied, so as to obtain a more reliable device. The CMOS image sensor of the present invention includes color filter layers formed over a semiconductor substrate, a planarization layer formed on the color filter layers, and microlenses formed of the same material as that of the planarization layer on the planarization layer, the microlenses positioned to correspond to the color filter layers respectively.
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