| 摘要 |
A nonvolatile memory device, a method for fabricating the same, and a method for programming/erasing data in the same are provided. At least one of a plurality of device isolation films is filled with polysilicon and used as an acceleration line. The nonvolatile memory device includes a semiconductor substrate defined by a plurality of device isolation regions and an active region, a first electrode layer formed in the at least one device isolation region of the plurality of device isolation regions, an isolation insulating layer filled in the other device isolation region of the plurality of device isolation regions, junction regions formed in a predetermined portion of the active region, a gate insulating film formed on the semiconductor substrate including the plurality of device isolation regions and the junction regions, a tunnel oxide film formed by selectively etching the gate insulating film, and a second electrode layer formed on the gate insulating film to partially overlap the junction regions.
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