| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a light emitting device with strong emission intensity and a narrow half-value width of light emission wavelength by providing a quantum well and rare earth element ions in a light emitting layer. <P>SOLUTION: The light emitting device 1 includes the light emitting layer mainly comprising silicon and containing rare earth elements. The light emitting layer contains the rare earth elements, and also includes a quantum well structure made of a porous semiconductor 12 and a semiconductor well structure 15 formed in a small pore 13 of the porous semiconductor 12. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
