Recess gate and method for fabricating semiconductor device with the same

摘要

A recess gate and a method for fabricating a semiconductor device with the same are provided. The recess gate includes: a substrate; a recess formed with a predetermined depth in a predetermined portion of the substrate; a gate insulation layer formed over the substrate with the recess; a gate polysilicon layer formed on the gate insulation layer; a gate metal layer being formed on the gate polysilicon layer and filling the recess; and a gate hard mask formed on the gate metal layer.