Siloxanharz und daraus hergestellter Zwischenisolationsfilm
摘要
<p>A siloxane-based resin having a novel structure and a semiconductor interlayer insulating film using the same. The siloxane-based resins have a low dielectric constant in addition to excellent mechanical properties and are useful materials in an insulating film between interconnect layers of a semiconductor device.</p>
申请公布号
DE602004000964(D1)
申请公布日期
2006.06.29
申请号
DE20046000964T
申请日期
2004.08.20
申请人
SAMSUNG ELECTRONICS CO., LTD.
发明人
YIM, JIN HEONG;LYU, YI YEOL;SONG, KI YONG;JEONG, HYUN DAM;RYU, JOON SUNG