| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a group III nitride semiconductor luminous element of high luminous efficiency. <P>SOLUTION: The group III nitride semiconductor luminous element in which an n-type layer, a luminous layer and a p-type layer including the group III nitride semiconductor are disposed so as to allow the n-type layer and p-type layer to sandwich the luminous layer on a substrate, wherein the scope of percentage Δa in difference between the a-axis lattice constant a<SB>1</SB>of a layer present between the luminous layer and the substrate and the a-axis lattice constant a<SB>2</SB>of the luminous layer, expressed by formula (I): Δa=100(a<SB>1</SB>-a<SB>2</SB>)/a<SB>1</SB>is -0.05≤Δa≤0.05(unit: %). <P>COPYRIGHT: (C)2006,JPO&NCIPI |
