| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method having a step of removing excessive deposit species impairing a self-limiting surface reaction. SOLUTION: The semiconductor device manufacturing method has a step of depositing a thin film on a substrate by alternately feeding a first raw material gas and a second raw material gas in a reaction furnace. The surface of the substrate is irradiated with plasma either after the first raw material gas is fed and before the second raw material gas is fed, or after the second raw material gas is fed and before the first raw material gas is fed. COPYRIGHT: (C)2006,JPO&NCIPI
|
