METAL OXIDE THIN FILM DEPOSITION METHOD

摘要

PROBLEM TO BE SOLVED: To provide a metal oxide thin film deposition method capable of generating various kinds of metal oxide thin films, in particular, compound metal oxide thin films consisting of metals of different kinds by using the ALD (Atomic Layer Deposition)method without affecting the film deposition speed. SOLUTION: Hydrolyzable metal compound is used for raw material gas, and hydrate of metal salt is used for oxidizing agent gas. The raw material gas and the oxidizing agent gas is alternately fed into a reaction chamber with a substrate placed therein across a purging step with purge gas to deposit a metal oxide thin film on the substrate. COPYRIGHT: (C)2006,JPO&NCIPI