Methods of forming thin layers including zirconium hafnium oxide and methods of forming gate structures, capacitors, and flash memory devices using the same

摘要

Methods of forming a zirconium hafnium oxide thin layer on a semiconductor substrate by supplying tetrakis(ethylmethylamino)zirconium ([Zr{N(C₂H₅)(CH₃)}₄], TEMAZ) and tetrakis(ethylmethylamino)hafnium ([Hf{N(C₂H₅)(CH₃)}₄], TEMAH) to a substrate are provided. The TEMAZ and the TEMAH may be reacted with an oxidizing agent. The thin layer including zirconium hafnium oxide may be used for a gate insulation layer in a gate structure, a dielectric layer in a capacitor, or a dielectric layer in a flash memory device.