发明名称 |
System and method for suppressing oxide formation |
摘要 |
A system and method for suppressing sub-oxide formation during the manufacturing of semiconductor devices (such as MOSFET transistor) with high-k gate dielectric is disclosed. In one example, the MOSFET transistor includes a gate structure including a high-k gate dielectric and a gate electrode. In this example, the gate structure is covered with a nitride layer that is used to prevent oxygen from entering the structure during processing, yet is sufficiently thin to be effectively transparent to the processing.
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申请公布号 |
US2006141729(A1) |
申请公布日期 |
2006.06.29 |
申请号 |
US20040025040 |
申请日期 |
2004.12.29 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
WANG CHIH-HAO;CHEN SHANG-CHIH |
分类号 |
H01L21/331 |
主分类号 |
H01L21/331 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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