摘要 |
An object of the invention is to provide a semiconductor device and an adjusting method for a semiconductor device wherein power source noises and noises radiated as radio waves can be reduced and power source noises inside the semiconductor device can be cut. The open stub OS 1 is formed in the upper wiring layer of the semiconductor device 1 . The stub length L 1 is set to a length of ¼ of the wavelength of the known frequency containing peak components of noises. The noise receiving part AT 1 is disposed adjacent to the open stub OS 1 . The open stub OS 1 is connected to the power source wiring 4 by an interlayer wiring 6 . The noise receiving part AT 1 is biased to a ground potential. The basic wave component and odd-number harmonic waves of noises that are generated from the PLL circuit 11 and propagate (the arrow Y 1 of FIG. 2 ) in the power source wiring 4 are reflected (arrow Y 2 of FIG. 2 ) by the open stub OS 1 so as to return to the PLL circuit 11 , and do not reach the filter circuit 12.
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