发明名称 Method for fabricating a CMOS image sensor
摘要 A method for fabricating a CMOS image sensor in which an electron shower is performed for microlenses whose surfaces are charged to a positive potential, so as to neutralize the positive potential, thereby improving performance and yield of the image sensor.
申请公布号 US2006141654(A1) 申请公布日期 2006.06.29
申请号 US20050312448 申请日期 2005.12.21
申请人 LIM BI O 发明人 LIM BI O.
分类号 H01L21/00 主分类号 H01L21/00
代理机构 代理人
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