摘要 |
A photoelectric conversion element includes a semiconductor layer including a pair of p<SUP>+</SUP> regions in which p-type impurities are doped, and a p<SUP>-</SUP> region which is disposed between the p<SUP>+</SUP> regions and has a lower p-type impurity concentration than the p<SUP>+</SUP> regions. A gate electrode is formed over the p<SUP>-</SUP> region via a gate insulation film, thus, a p-MOS structure is formed. A width of the gate electrode is less than a width of the p<SUP>-</SUP> region. A p<SUP>-</SUP> region, which is a portion of the p<SUP>-</SUP> region and is located immediately below the gate electrode, forms a light receiving layer, and p<SUP>-</SUP> regions, which are portions of the p<SUP>-</SUP> region and are located away from below the gate electrode, form LDD regions. The photoelectric conversion element is fabricated on the same substrate as a thin-film transistor for a driving circuit, thereby constructing a display device with an input function.
|