METHOD FOR PRODUCING EPITAXIAL SILICON WAFER

摘要

An oxide film (13) on the surface of a substrate (11) and an oxide film (112) in a COP (111) exposed in the surface of the substrate (11) are removed by cleaning the surface of the substrate (11) with a hydrofluoric acid solution. The substrate (11) is then cleaned with ozone water, thereby forming an oxide film (13) on the surface of the substrate (11). After that, the substrate (11) is subjected to a heat treatment for removing the oxide film (13) on the surface of the substrate (11). Consequently, the COP (111) in the surface of the substrate (11) is planarized and thus eliminated from the substrate surface. Following that, an epitaxial layer (12) is formed on the surface of the substrate (11).