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发明名称
METHOD FOR FABRICATING SCHOTTKY DIODE USING SILICON-BASED CMOS PROCESS
摘要
申请公布号
KR20060073088(A)
申请公布日期
2006.06.28
申请号
KR20040111943
申请日期
2004.12.24
申请人
MAGNACHIP SEMICONDUCTOR, LTD.
发明人
LEE, BEYONG HA
分类号
H01L29/872
主分类号
H01L29/872
代理机构
代理人
主权项
地址
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