发明名称 |
Schottky diode with vertical barrier |
摘要 |
<p>The diode has a nickel silicide (39) arranged at an interface between an anode electrode (31) and a substrate (33) for forming a schottky barrier. Conductive fingers (36) extend radially from the anode electrode and are surrounded with an insulating layer. An upper metallization contacts with the anode electrode and a lower metallization contacts with a cathode electrode.</p> |
申请公布号 |
EP1675184(A1) |
申请公布日期 |
2006.06.28 |
申请号 |
EP20050112805 |
申请日期 |
2005.12.22 |
申请人 |
ST MICROELECTRONICS S.A. |
发明人 |
LANOIS, FREDERIC;NIZOU, SYLVAIN |
分类号 |
H01L29/872 |
主分类号 |
H01L29/872 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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