发明名称 Gallium nitride single crystal substrate
摘要 <p>An n-type GaN substrate having a safe n-type dopant instead of Si which is introduced by perilous silane gas. The safe n-dopant is oxygen. The oxygen doped GaN free-standing crystal is an n-type crystal having carriers in proportion to the oxygen concentration. </p>
申请公布号 EP1672708(A3) 申请公布日期 2006.06.28
申请号 EP20060006946 申请日期 1999.05.26
申请人 SUMITOMO ELECTRIC INDUSTRIES, LTD. 发明人 MOTOKI, KENSAKU;OKAHISA, TAKUJI;MATSUMOTO, NAOKI;MATSUSHIMA, MASATO
分类号 H01L21/20;H01L21/205;H01L33/00 主分类号 H01L21/20
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