摘要 |
<p>Preparation of light-sensitive photo resist solution (I) comprises dissolving novolac resin (a) and diazonaphthoquinone-sulfochloride (b) in a solvent of photoresist solvents; reacting 1-70 mol.% of phenolic hydroxy groups of (a) with (b) in the presence of a base; washing the obtained reaction mixture with water and optionally diluting with further photoresist solvent. An independent claim is also included for a method for structured coating of a substrate, comprising preparing (I), applying directly on a pre-baked substrate, exposing the formed photoresist film by a photomask, baking the exposed photoresist film and developing the baked, exposed photoresist film with an alkaline developer.</p> |
申请人 |
AZ ELECTRONIC MATERIALS (GERMANY) GMBH |
发明人 |
ZAHN, WOLFGANG, DR.;GROTTENMUELLER, RALF, DR.;BRAUCH-FISCHER, CARINA;DRESEL, ANDREAS, DR.;ENGLERT, STEFAN;BLAHA, DANIELA |