发明名称 Method for producing a photoresist solution
摘要 <p>Preparation of light-sensitive photo resist solution (I) comprises dissolving novolac resin (a) and diazonaphthoquinone-sulfochloride (b) in a solvent of photoresist solvents; reacting 1-70 mol.% of phenolic hydroxy groups of (a) with (b) in the presence of a base; washing the obtained reaction mixture with water and optionally diluting with further photoresist solvent. An independent claim is also included for a method for structured coating of a substrate, comprising preparing (I), applying directly on a pre-baked substrate, exposing the formed photoresist film by a photomask, baking the exposed photoresist film and developing the baked, exposed photoresist film with an alkaline developer.</p>
申请公布号 EP1674929(A1) 申请公布日期 2006.06.28
申请号 EP20050028164 申请日期 2005.12.22
申请人 AZ ELECTRONIC MATERIALS (GERMANY) GMBH 发明人 ZAHN, WOLFGANG, DR.;GROTTENMUELLER, RALF, DR.;BRAUCH-FISCHER, CARINA;DRESEL, ANDREAS, DR.;ENGLERT, STEFAN;BLAHA, DANIELA
分类号 G03F7/023 主分类号 G03F7/023
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