发明名称 Semiconductor integrated circuit with noise reduction circuit
摘要 A semiconductor integrated circuit includes a substrate, a digital circuit formed on a triple well formed in the substrate, a first node configured to supply a well potential of the digital circuit, a second node separate from the first node, and a substrate-potential supplying circuit, formed on the substrate, having an input node to receive an input potential from the second node and an output node to supply a substrate potential to the substrate, the substrate-potential supplying circuit having no direct-current path into which a direct current substantially flows through the input node, and configured to generate at the output node an output potential following the input potential.
申请公布号 US7068548(B2) 申请公布日期 2006.06.27
申请号 US20040012145 申请日期 2004.12.16
申请人 FUJITSU LIMITED 发明人 NAKAMOTO HIROYUKI;GOTOH KUNIHIKO
分类号 G11C7/00;H01L27/04;G11C7/02;H01L21/822;H01L21/8234;H01L27/08;H01L27/088;H03F1/26;H03K19/003;H03K19/094 主分类号 G11C7/00
代理机构 代理人
主权项
地址