发明名称 |
Semiconductor device and method for fabricating the same |
摘要 |
As first thermal treatment for activating an impurity injected into a gate electrode, thermal treatment at a low temperature for a long time in which boron diffusion into each crystal grain in polysilicon hardly occurs and boron diffusion in each crystal boundary occurs is performed. Next, as second thermal treatment, thermal treatment at a high temperature for a short time, such as spike annealing and flash annealing, in which impurity diffusion into each crystal grain in a polysilicon layer occurs is performed.
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申请公布号 |
US7067382(B2) |
申请公布日期 |
2006.06.27 |
申请号 |
US20040853128 |
申请日期 |
2004.05.26 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
NAKAOKA HIROAKI;NAKANISHI KENTARO;UMIMOTO HIROYUKI;KAJIYA ATSUHIRO |
分类号 |
H01L21/336;H01L27/092;H01L21/265;H01L21/8238;H01L29/78 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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