发明名称 |
Method to reduce the fluorine contamination on the Al/Al-Cu pad by a post high cathod temperature plasma treatment |
摘要 |
A method of reducing fluorine contamination on a integrated circuit wafer surface is achieved. The method comprises placing an integrated circuit wafer on a cathode stage. The integrated circuit wafer comprises a surface contaminated with fluorine. The integrated circuit wafer is plasma treated with a plasma comprising a reducing gas that forms HF from the fluorine and a bombardment gas that removes the fluorine from the surface. The cathode stage is heated to thereby increase the rate of the fluorine removal.
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申请公布号 |
US7067433(B2) |
申请公布日期 |
2006.06.27 |
申请号 |
US20030706382 |
申请日期 |
2003.11.12 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
FU WEN-JUI;SHEN SHANG-RU;SHEN YUN-HUNG;CHEN CHAO-CHENG |
分类号 |
H01L21/00;H01L21/306;H01L21/311;H01L21/322;H01L21/44 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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