发明名称 |
Bi-layer photoresist dry development and reactive ion etch method |
摘要 |
A method for semiconductor device feature development using a bi-layer photoresist including providing a non-silicon containing photoresist layer over a substrate; providing a silicon containing photoresist layer over the non-silicon containing photoresist layer; exposing an exposure surface of the silicon containing photoresist layer to an activating light source said exposure surface defined by an overlying pattern according to a photolithographic process; developing the silicon containing photoresist layer according to a photolithographic process to reveal a portion the non-silicon containing photoresist layer; and, dry developing said non-silicon containing photoresist layer in a plasma reactor by igniting a plasma from an ambient mixture including at least nitrogen and oxygen.
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申请公布号 |
US7067235(B2) |
申请公布日期 |
2006.06.27 |
申请号 |
US20020050322 |
申请日期 |
2002.01.15 |
申请人 |
TSAI MING HUAN;TAO HUN-JAN |
发明人 |
TSAI MING HUAN;TAO HUN-JAN |
分类号 |
G03F7/00;G03F7/075;G03F7/095;G03F7/16;G03F7/36;G03F7/40 |
主分类号 |
G03F7/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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