发明名称 Semiconductor device and method of manufacturing the same
摘要 The present invention provides a semiconductor device including a plurality of wirings or conductive film patterns formed on a semiconductor substrate, and clearances are provided between the wirings or the conductive film patterns. On a corner or an end part of at least one of the wirings or the conductive film patterns, protrusions are formed to protrude, facing the clearances between the wirings or the conductive film patterns. Thereby, defects will not occur in the insulating protective film after an etching step for forming an aperture for exposing a bonding pad, and thus, a semiconductor device is manufactured without being subjected to an additional process that raises the manufacturing cost. The present invention provides also a method of manufacturing the semiconductor device.
申请公布号 US7067412(B2) 申请公布日期 2006.06.27
申请号 US20030678200 申请日期 2003.10.02
申请人 MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 发明人 FUKUMOTO AKIRA
分类号 H01L21/3205;H01L21/44;H01L21/4763;H01L21/768;H01L21/82;H01L23/52;H01L23/528;H01L27/04 主分类号 H01L21/3205
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