发明名称 |
Methods of removing resistive remnants from contact holes using silicidation |
摘要 |
A contact hole can be formed in an insulating layer to expose a surface of an underlying silicon layer at a bottom of the contact hole having a first size. A metal silicide layer can be formed beneath the bottom of the contact hole and removed to form a void beneath the contact hole having a second size that is greater than the first size.
|
申请公布号 |
US7067417(B2) |
申请公布日期 |
2006.06.27 |
申请号 |
US20040881642 |
申请日期 |
2004.06.30 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
PARK HEE-SOOK;CHOI GIL-HEYUN;LEE JONG-MYEONG |
分类号 |
H01L21/28;H01L21/4763;H01L21/00;H01L21/306;H01L21/311;H01L21/3213;H01L21/60;H01L21/768;H01L21/8242 |
主分类号 |
H01L21/28 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|