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发明名称
METHOD OF MANUFACTURING MOSFET DEVICE HAVING RECESSD GATE
摘要
申请公布号
KR100596804(B1)
申请公布日期
2006.06.27
申请号
KR20050057691
申请日期
2005.06.30
申请人
HYNIX SEMICONDUCTOR INC.
发明人
KIM, TAE KYUN
分类号
H01L21/336
主分类号
H01L21/336
代理机构
代理人
主权项
地址
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