发明名称 Method of manufacturing a semiconductor device using electrical contacts formed in an isolation layer
摘要 Disclosed are techniques for constructing a novel solder bump layout on substrates for bonding using flip-chip, wafer-level, or other similar techniques. In one embodiment, a method of manufacturing a semiconductor device provides for forming contact pads on a first substrate, and forming an isolation layer over the contact pads and the substrate. In addition the method includes forming openings in the isolation layer over the contact pads, and depositing metal in the openings and in electrical contact with the contact pads to form electrical contacts in the openings. Also in such embodiments, the method includes bonding exposed surfaces of the electrical contacts to corresponding bonding pads formed on an external surface of a second substrate. In these embodiments, the bonding is done such that the isolation layer is in contact with the external surface to provide electrical isolation between the first and second substrates and between the electrical contacts.
申请公布号 US7067350(B1) 申请公布日期 2006.06.27
申请号 US20050906029 申请日期 2005.01.31
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. 发明人 LIOU PING
分类号 H01L21/44;H01L21/48 主分类号 H01L21/44
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