发明名称 Process for the production of Cd XTe semiconductor crystals with high resistivity and resulting crystalline material
摘要 Process for the production of semiconductor crystals with high resistivity of the CdXTe type, wherein X=Zn, Se, ZnSe or 0, characterized in that it consists in carrying out a multiple doping with iron and with at least one second doping element selected from the group formed by the elements of group III of the periodic chart of the elements.
申请公布号 US7067008(B2) 申请公布日期 2006.06.27
申请号 US20030378896 申请日期 2003.03.05
申请人 EURORAD 2-6 SA 发明人 KAZANDJIAN ANNE;KOEBEL JEAN-MARIE;SIFFERT PAUL;HAGE ALI MAKRAM
分类号 C30B15/04;C30B11/00 主分类号 C30B15/04
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