发明名称 METHOD FOR PRODUCING INSULATION ON INTEGRATED-CIRCUIT COMPONENTS
摘要 FIELD: microelectronics; large-scale integrated circuits using side insulation. ^ SUBSTANCE: proposed method includes formation of buried layers in semiconductor substrate, build-up of epitaxial film, application of masking layers, etching of grooves in epitaxial film, formation of anti-channel p+ stop regions, application of polysilicon film, and filling of grooves with silicon oxyl. Application of masking layers is followed by covering the latter with doped oxide film. Grooves are etched through thickness of epitaxial film. Then insulating film is formed on walls and bottoms of grooves prior to organizing anti-channel p+ stop regions. Oxyl is locally removed from bottom of each groove. Upon polysilicon application structure is thermally annealed in inert atmosphere, and doped polysilicon is etched selectively with respect to non-doped polysilicon. Grooves are filled up by oxidizing polysilicon filling them. ^ EFFECT: enhanced degree of integration and yield. ^ 1 cl, 7 dwg
申请公布号 RU1840163(C) 申请公布日期 2006.06.27
申请号 SU19823052678 申请日期 1982.11.02
申请人 Акционерное общество открытого типа "НИИ молекул рной электроники и завод "МИКРОН" 发明人 MANZHA NIKOLAJ MIKHAJLOVICH;MANZHA LJUBOV' PAVLOVNA;SHURCHKOV IGOR' OLEGOVICH;SULIMIN ALEKSANDR DMITRIEVICH;JACHMENEV VLADIMIR VASIL'EVICH;KOVALENKO GALINA PETROVNA
分类号 H01L21/82 主分类号 H01L21/82
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