发明名称 |
Semiconductor memory device for controlling cell block with state machine |
摘要 |
A semiconductor memory device for an effective data access operation includes a cell area having N+1 number of unit cell blocks, each including M number of word lines, for storing a data in a unit cell corresponding to an inputted address; N+1 number of unit controlling blocks having respective state machines and corresponding to the respective N+1 unit cell blocks for controlling a data restoration that is accessed from a first unit cell block selected from the N+1 unit cell blocks into the first unit cell block or a second unit cell block; and a driving controlling block for controlling the N+1 unit cell blocks so that the N+1 unit controlling means are in one of first to fourth operation states.
|
申请公布号 |
US7068561(B2) |
申请公布日期 |
2006.06.27 |
申请号 |
US20040015475 |
申请日期 |
2004.12.20 |
申请人 |
HYNIX SEMICONDUCTOR INC. |
发明人 |
HONG SANG-HOON;KO JAE-BUM;KIM SE-JUN |
分类号 |
G11C8/00;G11C7/10;G11C7/22;G11C8/12;G11C29/00 |
主分类号 |
G11C8/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|