发明名称 Semiconductor memory device for controlling cell block with state machine
摘要 A semiconductor memory device for an effective data access operation includes a cell area having N+1 number of unit cell blocks, each including M number of word lines, for storing a data in a unit cell corresponding to an inputted address; N+1 number of unit controlling blocks having respective state machines and corresponding to the respective N+1 unit cell blocks for controlling a data restoration that is accessed from a first unit cell block selected from the N+1 unit cell blocks into the first unit cell block or a second unit cell block; and a driving controlling block for controlling the N+1 unit cell blocks so that the N+1 unit controlling means are in one of first to fourth operation states.
申请公布号 US7068561(B2) 申请公布日期 2006.06.27
申请号 US20040015475 申请日期 2004.12.20
申请人 HYNIX SEMICONDUCTOR INC. 发明人 HONG SANG-HOON;KO JAE-BUM;KIM SE-JUN
分类号 G11C8/00;G11C7/10;G11C7/22;G11C8/12;G11C29/00 主分类号 G11C8/00
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