| 摘要 |
A semiconductor integrated circuit device has a plurality of rows of pillars, each row being composed of semiconductor pillars and insulator pillars alternately arranged in one direction with no gap therebetween, a plurality of nonvolatile memory elements provided individually in the plurality of semiconductor pillars, the plurality of nonvolatile memory elements having control gate electrodes provided over side surfaces of said semiconductor pillars along the one direction via gate insulating films, drain regions provided in upper surface portions of the semiconductor pillars, and source regions provided in bottom surface portions of the semiconductor pillars, and lines including the respective control gate electrodes of the plurality of nonvolatile memory elements and provided along the one direction over the side surfaces of the rows of pillars along the one direction.
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