发明名称 CPP GMR read head
摘要 Replacing ruthenium with rhodium as the AFM coupling layer in a synthetically pinned CPP GMR structure enables the AP1/AP2 thicknesses to be increased. This results in improved stability and allows the free layer and AFM layer thicknesses to be decreased, leading to an overall improvement in the device performance. Another key advantage of this structure is that the magnetic annealing requirements (to establish antiparallelism between AP1 and AP2) can be significantly relaxed.
申请公布号 US7068478(B2) 申请公布日期 2006.06.27
申请号 US20030631840 申请日期 2003.07.31
申请人 HEADWAY TECHNOLOGIES, INC. 发明人 LI MIN;ZHANG KUNLIANG;SBIAA RACHID;HORNG CHENG T.;LIAO SIMON;JU KOCHAN
分类号 G11B5/39;C21D1/04;G11C11/00;H01F10/32;H01F41/30 主分类号 G11B5/39
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