发明名称 |
Semiconductor structure having an abrupt doping profile |
摘要 |
A structure and method of forming an abrupt doping profile is described incorporating a substrate, a first epitaxial layer of Ge less than the critical thickness having a P or As concentration greater than 5x10<SUP>19 </SUP>atoms/cc, and a second epitaxial layer having a change in concentration in its first 40 Å from the first layer of greater than 1x10<SUP>19 </SUP>P atoms/cc. Alternatively, a layer of SiGe having a Ge content greater than 0.5 may be selectively amorphized and recrystalized with respect to other layers in a layered structure. The invention overcomes the problem of forming abrupt phosphorus profiles in Si and SiGe layers or films in semiconductor structures such as CMOS, MODFET'S, and HBT's. |
申请公布号 |
US7067855(B2) |
申请公布日期 |
2006.06.27 |
申请号 |
US20030735167 |
申请日期 |
2003.12.12 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
CARDONE FRANK;CHU JACK OON;ISMAIL KHALID EZZELDIN |
分类号 |
H01L31/0328;H01L21/205;H01L21/265;H01L21/335;H01L21/336;H01L21/338;H01L29/10;H01L29/36;H01L29/778;H01L29/812;H01L31/0336;H01L31/072;H01L31/109 |
主分类号 |
H01L31/0328 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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