| 摘要 |
A transistor structure comprising an active semiconductor layer with metal source and drain contacts (20, 22) formed in electrical contact with the active layer. A gate contact (26) is formed between the source and drain contacts for modulating electric fields within the active layer. A spacer layer (24) is formed above the active layer and a conductive field plate (28) formed above the spacer layer, extending, a distance Lf from the edge of the gate contact toward the drain contact. The field plate is electrically connected to the gate contact. |
