METHOD OF FORMING A FIELD OXIDE LAYER IN FLASH MEMORY DEVICE,申请号KR20040108646-传众专利搜索

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发明名称	METHOD OF FORMING A FIELD OXIDE LAYER IN FLASH MEMORY DEVICE
摘要
申请公布号	KR20060070029(A)	申请公布日期	2006.06.23
申请号	KR20040108646	申请日期	2004.12.20
申请人	HYNIX SEMICONDUCTOR INC.	发明人	HWANG, KYUNG PIL
分类号	H01L21/8247;H01L21/76	主分类号	H01L21/8247
代理机构		代理人
主权项
地址

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