NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE USING THE SAME
摘要
<p>Example embodiments of the present invention disclose a non-volatile semiconductor memory device, which may include a dielectric layer having an enhanced dielectric constant. A tunnel oxide layer pattern and a floating gate may be sequentially formed on a substrate. A dielectric layer pattern including metal oxide doped with Group III transition metals may be formed on the floating gate using a pulsed laser deposition process. The dielectric layer pattern having an increased dielectric constant may be formed of metal oxide doped with a transition metal such as scandium, yttrium, or lanthanum.</p>
申请公布号
KR20060070007(A)
申请公布日期
2006.06.23
申请号
KR20040108624
申请日期
2004.12.20
申请人
SAMSUNG ELECTRONICS CO., LTD.
发明人
LEE, JONG CHEOL;KIM, SUNG TAE;KIM, YOUNG SUN;YOO, CHA YOUNG;PARK, YOUNG GEUN;CHOI, JAE HYOUNG;YEO, JAE HYUN;CHOI, HAN MEI;NAM, GAB JIN