| 摘要 |
PROBLEM TO BE SOLVED: To let accumulated electric charges to escape, when crystallizing an amorphous silicon film by having an electron beam irradiate on it. SOLUTION: A conductive light-shielding film 204 can let electric charges accumulated in the amorphous silicon film and polysilicon layer to escape, whereon the electron beam is irradiated. More specifically, the conductive lightproof film 204 can let electric charge escape outside the device via interconnections L1 and L2, resulting in the reduction of chargeup in the amorphous silicon film or polysilicon layer. Consequently, the occurrence of an electric field due to electric charge accumulated in the amorphous silicon film or polysilicon film can be suppressed, allowing the electron beam to reach the amorphous silicon film, etc. COPYRIGHT: (C)2006,JPO&NCIPI |
