| 摘要 |
PROBLEM TO BE SOLVED: To provide a self-alignment patterning method that can be used to manufacture a plurality of thin film transistors on a substrate. SOLUTION: A patterned mask 20 is formed on the surface of a sacrifice layer 18, which is a part of a multilayer structure 10 comprising a substrate 12, a conductive layer 14, an insulating layer 16, and the sacrifice layer 18. Next, a non-patterned area is etched and the corresponding areas of the sacrifice layer in which hollows are left, the insulating layer 16, and the conductive layer 14 are removed. Next, a layer of dielectric 22 is formed on the entire etched multilayer structure to fill the hollows at least substantially. Next, the formed dielectric is etched and the side face of the residual area 28 of the sacrifice layer is exposed. Next, a conductive material 30 is formed on the surface of the etched dielectric. Finally, the residual area 28 of the sacrifice layer is removed along with the covering material. COPYRIGHT: (C)2006,JPO&NCIPI |
