| 摘要 |
PROBLEM TO BE SOLVED: To provide a ferroelectric memory for preventing deterioration in characteristic of a ferroelectric capacitor due to an electric field from the side face of a lower electrode, a manufacturing method thereof, a ferroelectric memory device, a manufacturing method thereof, and an electronic apparatus. SOLUTION: The ferroelectric memory 15 has a ferroelectric capacitor consisting of the lower electrode 12 formed on a base 10, a ferroelectric layer 14 formed to cover the lower electrode 12, an upper electrode 16 formed on the ferroelectric layer 14. A crystallization inhibition layer 11 which consists of a material reacting with a ferroelectric material for forming the ferroelectric layer 14 to increase a crystallization temperature of the ferroelectric material is provided so that at least one part may contact the ferroelectric layer 14, in a position not covering the lower electrode 12 between the base 10 and the ferroelectric layer 14. A first part 14a of the ferroelectric layer 14 which contacts the crystallization inhibition layer 11 is formed in amorphous or pyrochlore type, and a second part 14b covering the lower electrode 12 is crystallized into a perovskite type. COPYRIGHT: (C)2006,JPO&NCIPI
|
