WAFER HEATING AND TEMPERATURE CONTROL BY BACKSIDE FLUID INJECTION
摘要
<p>In one of the many embodiments, an apparatus for processing a substrate is provided which includes a substrate processing chamber where the substrate is positioned within the substrate processing chamber so the substrate at least partially separates the substrate processing chamber into a first chamber and a second chamber. The apparatus further includes a first chamber inlet configured to input a first fluid of a first temperature into the first chamber at a first pressure and a second chamber inlet configured to input a second fluid of a second temperature into the second chamber at a second pressure wherein the first pressure and the second pressure are substantially equal. The second temperature is capable of being utilized to manage substrate temperature.</p>
申请公布号
WO2006065532(A2)
申请公布日期
2006.06.22
申请号
WO2005US43256
申请日期
2005.11.29
申请人
LAM RESEARCH CORPORATION;MOORING, BEN;PARKS, JOHN;HYMES, DIANE, J.