发明名称 PIEZOELECTRIC THIN-FILM RESONATOR AND METHOD FOR PRODUCING THE SAME
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a production method for enhancing characteristics of a piezoelectric thin-film resonator and improving electric power resistance. <P>SOLUTION: Flatness of end face portions and a principal plane is improved by previously performing a plasma treatment on a sacrificial layer, for forming an air-gap layer, formed between a vibrating part of the piezoelectric thin-film resonator and a substrate. By improving flatness and covering ability of a dielectric layer formed thereon, crystallinity of electrodes formed thereon is further improved, wiring resistance is reduced and characteristics are enhanced. Moreover, since the covering ability of the dielectric film is improved, the electrodes are prevented from being simultaneously eroded in the case of etching the sacrificial layer, thereby improving electric power resistance. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p>
申请公布号 JP2006166419(A) 申请公布日期 2006.06.22
申请号 JP20050316894 申请日期 2005.10.31
申请人 MURATA MFG CO LTD 发明人 FUJII HIDETOSHI;KUBO RYUICHI
分类号 H03H3/02;H01L41/09;H01L41/18;H01L41/22;H03H9/02;H03H9/17 主分类号 H03H3/02
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