| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor apparatus for preventing an operation time from being delayed due to charging power to a portion unnecessary for an operation, which reduces the influence on a gate capacity due to the structure of a gate oxide film. SOLUTION: The semiconductor apparatus is provided with the gate oxide film on the surface of a trench formed on the surface of a semiconductor substrate and a gate electrode formed in the trench. In this method, an insulating material is deposited in the trench, the insulating material is etched other than a part on the bottom of the trench, the gate oxide film is formed on the sidewall of the trench, and a conductor to be used as the gate electrode is embedded in the trench. COPYRIGHT: (C)2006,JPO&NCIPI
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