| 摘要 |
PROBLEM TO BE SOLVED: To solve the problem that in the power MOSFET structure, even if a super-junction structure is used, it has been difficult to improve the withstand pressure of an element. SOLUTION: This power MOSFET, which is a semiconductor device having a super-junction structure. Further, the MOSFET is provided with a gate electrode embedded into a trench formed on the semiconductor substrate, a gate electrode metal film 111 formed on the surface layer, and a gate electrode plug 112 for connecting the gate electrode 106 and the gate electrode metal film. By providing these components, a polysilicon sedimentary layer need not be formed, which has been necessary for a conventional general power MOSFET. In short, the element activation section and the column region of the outer periphery can be formed under the same conditions. As a result, the withstand pressure of the element can be enhanced more than ever. COPYRIGHT: (C)2006,JPO&NCIPI
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